^s.mi-donducto'i ipioducti, una, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 rfm15n12, RFM15N15, rfp15n12, rfp15n15 n-channel enhancement-mode power field-effect transistors 15 a, 120v ?150v ro?(on): 0.15 n features: ? so/a is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? ma/ority carrier device the rfm15n12 and rpm15n1s and the rfp15n12 and rfp15n15'are n-channel enhancement-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate- drive power. these types can be operated directly from integrated circuits. the rfm-lypes are supplied in the jedec to-204aa steel package and the rfp-types in the jedec to-220ab plastic package. ..... n-channel enhancement mode terminal designations rfm15n12 rfm1sn15 gate jedec to-204aa rfp15n12 rfp15n15 iflanse)" jedec to-220ab maximum ratings, absolute-maximum values (tc=25c): vd vo v b drain-source voltage drain-gate voltage (ros=1 mo) gate-source voltage drain current rms continuous pulsed power dissipation @tc=2s'c derate above tc-25c operating and storage temperature ti, t., rfm15n12 120 120 RFM15N15 150 150 rfp15n12 120 120 rfp1sn16 1so 150 v v v a a 100 0.80 100 0.80 76 0.6 75 0.6 w w/c -55 to +1so nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
rfm15n12, RFM15N15, rfp15n12, rfp15n15 electrical characteristics at case temperature (te) = 25c unle$s otherwise specified , characteristics drain-source breakdown voltage gate threshold voltage zero gate voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance junction-to-case symbol bvdas vasiiiu ims loss vds(on)' ros(on)' g,.' cim com c? td(on) t, wolf) t< r0jc test conditions lo = 1 ma vRFM15N15 rfp15n12. rfp15n15 limits rfm16n12 rfp1sn12 min. 120 2 - - - - - 5 _ ? 50(typ.) 1so(typ.) 185(typ.) 126(typ.) - - max. - 4 1 50 100 1.125 3 0,15 - 1700 750 350 75 225 2bo 190 1.25 1.67 RFM15N15 rfp18n15 min. 150 2 - - - - - 5 _ ? 50{typ.) 150{typ.) 185(typ.) 125(typ.) - - max. - 4 1 50 100 1.125 3 0,15 - 1700 750 350 75 225 260 190 1.25 1.67 units v v //a na v n mho pf ns "c/w ?pulsed: pulse duration = 300 ps max., duty cycle = 2%. source-drain diode ratings and characteristics characteristic diode forward voltage reverse recovery time symbol vsd !? test conditions lso=7.5a if=4a d,f/d,=100a//ffi limits rfm15n12 rfp15n12 min. ? max. 1.4 200(typ) RFM15N15 rfp15n15 min. ? max. 1,4 200(typ) units v ns 'pulse test: width '- 300 fja, duty cycle 2%.
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